Uvavanyo lweDatha yeCell Thermal Runaway kunyeUhlalutyo lweGesiImveliso,
Uhlalutyo lweGesi,
Ngokhuseleko lomntu kunye nepropathi, urhulumente waseMalaysia useka iskim soqinisekiso lwemveliso kwaye ubeka iliso kwizixhobo zombane, ulwazi & nemultimedia kunye nemathiriyeli yokwakha. Iimveliso ezilawulwayo zinokuthunyelwa eMalaysia kuphela emva kokufumana isatifikethi semveliso kunye nokuleyibhile.
I-SIRIM QAS, icandelo eliphantsi kweMalaysian Institute of Industry Standards, kuphela kweyunithi echongiweyo yesatifikethi yee-arhente zolawulo zelizwe laseMalaysia (KDPNHEP, SKMM, njl.).
Isatifikethi sebhetri yesibini sichongwe yi-KDPNHEP (uMphathiswa waseMalaysia woRhwebo lwaseKhaya kunye neMicimbi yabaThengi) njengoyena gunyaziwe woqinisekiso. Okwangoku, abavelisi, abarhwebi kunye nabarhwebi banokufaka isicelo sesiqinisekiso kwi-SIRIM QAS kwaye bafake isicelo sokuvavanywa kunye nokuqinisekiswa kweebhetri zesibini phantsi kwemo yesiqinisekiso selayisensi.
Ibhetri yesibini okwangoku iphantsi kwesiqinisekiso sokuzithandela kodwa izakuba kuluhlu lwesiqinisekiso esisinyanzelo kungekudala. Olona suku lunyanzelekileyo luxhomekeke kwixesha elisemthethweni le-Malaysian isaziso. I-SIRIM QAS sele iqalisile ukwamkela izicelo zesiqinisekiso.
Umgangatho wesiqinisekiso sebhetri yesibini : MS IEC 62133:2017 okanye IEC 62133:2012
● Kusekwe utshintshiselwano olululo lobugcisa kunye nejelo lokutshintshiselana ngolwazi kunye ne-SIRIM QAS eyabela ingcali ukuba ijongane neeprojekthi ze-MCM kunye nemibuzo kuphela kunye nokwabelana ngolwazi lwamva nje oluchanekileyo lwale ndawo.
● I-SIRIM QAS ibona idatha yovavanyo lwe-MCM ukuze iisampuli zivavanywe kwi-MCM endaweni yokuba zisiwe eMalaysia.
● Ukubonelela ngenkonzo yokuma enye kwisiqinisekiso saseMalaysia seebhetri, iiadaptha kunye neeselfowuni.
I-T1 yiqondo lokushisa lokuqala apho iseli ishushu kwaye izinto zangaphakathi zibola. Ixabiso layo libonisa uzinzo olupheleleyo lwe-thermal yeseli. Iiseli ezinamaxabiso aphezulu e-T1 zizinzile ngakumbi kumaqondo obushushu aphezulu. Ukunyuka okanye ukuncipha kwe-T1 kuya kuchaphazela ubukhulu befilimu ye-SEI. Ukushisa okuphezulu kunye nokuguga kweseli kuya kunciphisa ixabiso le-T1 kwaye lenze ukuzinza kwe-thermal yeseli kubi nakakhulu. Ukuguga kweqondo lokushisa eliphantsi kuya kubangela ukukhula kwe-lithium dendrites, okubangelwa ukuhla kwe-T1, kunye nokuguga okuphezulu kweqondo lokushisa kuya kukhokelela ekuqhekekeni kwefilimu ye-SEI, kunye ne-T1 nayo iya kuncipha.
I-T2 bubushushu bokunciphisa uxinzelelo. Uncedo lwangexesha lwerhasi yangaphakathi lunokubuchitha ubushushu kwaye lucothise utyekelo lwe-thermal runaway.T3 yi-trigger yobushushu be-thermal runaway, kunye nesiqalo sokukhutshwa kobushushu kwiseli. Inobudlelwane obuqinileyo kunye nokusebenza kwe-substrate ye-diaphragm. Ixabiso le-T3 likwabonisa ukuxhathisa kwe-thermal yezinto ngaphakathi kweseli. Iseli ene-T3 ephezulu iya kukhuseleka ngakumbi phantsi kweemeko ezahlukeneyo zokuxhatshazwa.
I-T4 lelona qondo lobushushu liphezulu iiseli ezinokufikelela kulo ngexesha lokubaleka kwe-thermal. Umngcipheko wokusasazeka kwe-thermal kwimodyuli okanye inkqubo yebhetri ingavavanywa ngakumbi ngokuvavanya isizukulwana sokushisa esipheleleyo (ΔT = T4 -T3) ngexesha lokukhutshwa kwe-thermal yeseli. Ukuba ubushushu buphezulu kakhulu, buya kukhokelela ekubalekeni kwe-thermal yeeseli ezijikelezileyo, kwaye ekugqibeleni usasazeke kuyo yonke imodyuli.